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April 2010
2N7002V/VA
N-Channel Enhancement Mode Field Effect Transistor
Features
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant
(Pin4)
SOT - 563F
* Pin1 and Pin4 are exchangeable.
Marking : AB
Marking : AC
Absolute Maximum Ratings *
T A = 25°C unless otherwise noted
Symbol
V DSS
V DGR
Parameter
Drain-Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M Ω
Value
60
60
Units
V
V
V GSS
I D
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Continuous
Pulsed
±20
±40
280
1.5
V
mA
A
T J , T STG
Junction and Storage Temperature Range
-55 to +150
° C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
P D
R θ JA
Parameter
Total Device Dissipation
Derating above T A = 25°C
Thermal Resistance, Junction to Ambient *
Value
250
2.0
500
Units
mW
mW/°C
° C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimum land pad size.
? 2010 Fairchild Semiconductor Corporation
2N7002V/VA Rev. A1
1
www.fairchildsemi.com
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